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Semiconductor Product

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS)

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CQ0765RT hover image

CQ0765RT

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Rp50,000

FGA15N120 hover image

FGA15N120

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Rp70,000

IN5408

IN5408

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Rp3,000

SN74LS244N hover image

SN74LS244N

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Rp30,000

TT2190 hover image

TT2190

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Rp30,000

1200P60 hover image

1200P60

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Rp50,000

200D6 hover image

200D6

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Rp45,000

24N60C3 hover image

24N60C3

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Rp75,000

25256E hover image

25256E

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Rp75,000

2GM/MMBTA56LT3G hover image

2GM/MMBTA56LT3G

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Rp25,000

2N7002E hover image

2N7002E

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Rp10,000

2SA1006B hover image

2SA1006B

Silicon PNP Power Transistorhttps://pdf1.alldatasheet.com/datasheet-pdf/view/1087227/NJSEMI/2SA1006B..

Rp40,000

2SA1216 hover image

2SA1216

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Rp30,000

2SC2922 hover image

2SC2922

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Rp30,000

2SD1883 hover image

2SD1883

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Rp20,000

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