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from traditional configurations tocustom ,multi prot and bundled solusionsmolex expertise ensures y..
Rp0
Origin:Mainland ChinaItem Type:starters...
2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various ..
NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devic..
Ideal solution for 48 v pre - isolated DC /DC telcom infrastrure server & data centres.Higs -mp..
Simplify the integration of automative edge deploy ments with the cloud.This devices low level audi..
Then 2N5564 /5565 /5566 are matched pars of sourced from mounted ina a TO - 71 package - THIS two -..
DESCRIPTION• High DC Current Gain-hFE=15~60@IC = -25A• Low Saturation VoltageVCE(sat)= -1.0V(Max)@ ..
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best f..
Stress Exeding Maximum ratings may demage the device maximum Ratting are stress rating only ...
These devices are designed for use in general−purpose amplifier and switching applications.Features..
GENERAL FEATURES● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=4.5V &nb..
The 2p4m to 2p6m are P - gate all diffused plastic molded type SCR granted average on -state ..
Bundle:Bundle 1Battery Number:2Size:75*41*22mmSet Type:Batteries OnlyType:Li-IonNominal Capacity:260..
Rp2,455,500