MAXIM
2a823j
from traditional configurations tocustom ,multi prot and bundled solusionsmolex expertise ensures y..
Rp0
2dw234 .
from traditional configurations tocustom ,multi prot and bundled solusionsmolex expertise ensures y..
Rp0
2ED020I12-FI 2ED020I12 SOP18 New
Package:QFN PLCC TQFP BGA DIPis_customized:YesModel Number:2ED020I12-FI 2ED0..
Rp93,500
2n3055
2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various ..
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2n3866
NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devic..
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2n3904
Ideal solution for 48 v pre - isolated DC /DC telcom infrastrure server & data centres.Higs -mp..
Rp0
2n5457
Simplify the integration of automative edge deploy ments with the cloud.This devices low level audi..
Rp0
2N5564
Then 2N5564 /5565 /5566 are matched pars of sourced from mounted ina a TO - 71 package - THIS two -..
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2n5684.
DESCRIPTION• High DC Current Gain-hFE=15~60@IC = -25A• Low Saturation VoltageVCE(sat)= -1.0V(Max)@ ..
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2N60C3
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best f..
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2n6388
Stress Exeding Maximum ratings may demage the device maximum Ratting are stress rating only ...
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2N6491
These devices are designed for use in general−purpose amplifier and switching applications.Features..
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2p4m
The 2p4m to 2p6m are P - gate all diffused plastic molded type SCR granted average on -state ..
Rp0