MAXIM
2sd1027
SHINDENGEN Darlington Transistor 2SD1027 (T15L20) 15A NPN OUTLINE DIMENSIONS Case : MTO-3P Uni..
Rp0
2sd1113
DESCRIPTION• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min)• High DC Curre..
Rp0
2sd1119
DESCRIPTION• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)• High DC Current Gain : hFE= ..
Rp0
2sd1410
DESCRIPTION• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)• Collector-Emitter Saturat..
Rp0
2sd1552
Silicon NPN Darlington Power TransistorDESCRIPTION·High DC Current Gain : hFE = 1000(Min.)@ IC..
Rp0
2sd1594
DESCRIPTION• With TO-220Fa package• Low collector saturation voltageAPPLICATIONS• Low frequency powe..
Rp0
2sd1758
Features1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A)2) Complements the 2SB1188 / 2SB1182..
Rp0
2sd1899
DESCRIPTION• Low collector saturation voltage• 100% avalanche tested• Minimum Lot-to-Lot variations ..
Rp0
2sd1940
DESCRIPTION• With TO-220F package• Wide area of safe operationAPPLICATIONS• 85V/6A, AF 25 to 30W out..
Rp0
2sd1947
DESCRIPTION• With TO-220F package• Wide area of safe operationAPPLICATIONS• 85V/6A, AF 25 to 30W out..
Rp0
2sd2165
NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD216..
Rp0
2sd2165
High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A)• Low Collector-Emitter Saturati..
Rp65,000
2SD2165
NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD216..
Rp0
2sd438
DESCRIPTION• With TO-3 package• High voltage• Fast switching speedAPPLICATIONS• For switching regula..
Rp0
2sd847
DESCRIPTION• With TO-3PN package• High collector current• Wide area of safe operation• Complement to..
Rp0