MAXIM
2SC4541
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)Toshiba Semiconductor..
Rp35,000
2sc5359
Power Amplifier Applications• High breakdown voltage: VCEO= 230 V• Complementary to 2SA1..
Rp0
2sc6090
Color TV Horizontal Deflection Output ApplicationsFeatures• High speed.• High breakdown voltage (VCB..
Rp0
2sd1027
SHINDENGEN Darlington Transistor 2SD1027 (T15L20) 15A NPN OUTLINE DIMENSIONS Case : MTO-3P Uni..
Rp0
2sd1113
DESCRIPTION• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min)• High DC Curre..
Rp0
2sd1119
DESCRIPTION• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)• High DC Current Gain : hFE= ..
Rp0
2sd1410
DESCRIPTION• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)• Collector-Emitter Saturat..
Rp0
2sd1552
Silicon NPN Darlington Power TransistorDESCRIPTION·High DC Current Gain : hFE = 1000(Min.)@ IC..
Rp0
2sd1594
DESCRIPTION• With TO-220Fa package• Low collector saturation voltageAPPLICATIONS• Low frequency powe..
Rp0
2sd1758
Features1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A)2) Complements the 2SB1188 / 2SB1182..
Rp0
2sd1899
DESCRIPTION• Low collector saturation voltage• 100% avalanche tested• Minimum Lot-to-Lot variations ..
Rp0
2sd1940
DESCRIPTION• With TO-220F package• Wide area of safe operationAPPLICATIONS• 85V/6A, AF 25 to 30W out..
Rp0
2sd1947
DESCRIPTION• With TO-220F package• Wide area of safe operationAPPLICATIONS• 85V/6A, AF 25 to 30W out..
Rp0
2SD2165
NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD216..
Rp0
2sd2165
NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD216..
Rp0