Transistor
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24n60c3c1
New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme ..
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25N120NDA
VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(..
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2905B
The 2905B parts manufactured by NEC are available for purchase at Jotrin Electronics. Here you can f..
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29M33
DATA SHEET µPC29M33A,µPC29M05A THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR BIPOLAR ANALOG INTEGRATE..
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2n3055
2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various ..
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2n3866
NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devic..
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2n3904
Ideal solution for 48 v pre - isolated DC /DC telcom infrastrure server & data centres.Higs -mp..
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2n5457
Simplify the integration of automative edge deploy ments with the cloud.This devices low level audi..
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2N5564
Then 2N5564 /5565 /5566 are matched pars of sourced from mounted ina a TO - 71 package - THIS two -..
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2n5684.
DESCRIPTION• High DC Current Gain-hFE=15~60@IC = -25A• Low Saturation VoltageVCE(sat)= -1.0V(Max)@ ..
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2N60C3
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best f..
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2n6388
Stress Exeding Maximum ratings may demage the device maximum Ratting are stress rating only ...
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2N6491
These devices are designed for use in general−purpose amplifier and switching applications.Features..
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2p4m
The 2p4m to 2p6m are P - gate all diffused plastic molded type SCR granted average on -state ..
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