Transistor
40N10-25
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE 40A,100V,RDS(ON)=40mΩ@VGS=10V/20..
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43NM60ND
STW43NM60ND www.datasheet4u.com N-channel 600 V - 0.075 Ω - 35 A - TO-247 FDmesh™ Power MOSFET&..
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45n65m5
STB45N65M5, STF45N65M5, STP45N65M5 N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET&n..
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4h11g
High-Voltage - High Power Transistors. . . designed for use in high power audio amplifier applicatio..
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4n33
The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting ..
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5h11g
Designed for general purpose power and switching applicationssuch as regulators, converters and powe..
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5m0380R
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minim..
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6 n 136
A separate connection for the bias of the photodiode improves the speed by several orders of magnitu..
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60T65PES MBQ60T65PES
Model Number:MBQ60T65PESPackage Type:Throught HoleCondition:NewOrigin:Mainland China..
Rp35,000
647 gif
Base Absolute Maximum Ratings：( Tc=25℃ unless specified) Parameter Symbol Value Collector-Emitter Vo..
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6n 135
The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a one chip photo diode−transistor...
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6r075p
Features• Lowest figure-of-merit RON x Qg• Extreme dv/dt rated• High peak current capability• Qualif..
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6R125P
MOSFET N-CH 650V 25A TO220-3N-Channel 650 V 25A (Tc) 208W (Tc) Through Hole PG-TO220-3..
Rp60,000
6R125P
CoolMOSTM Power Transistor Features Lowest figure-of-merit RONxQg Ultra low gate charge Ex..
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74AC138
74AC138 3 TO 8 LINE DECODER (INVERTING) s s s s s s s s s HIGH SPEED: tPD =4.5 ns (TYP.) at VCC = 5V..
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