The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applicatio
FEATURES
• Low On-Resistance
RDS(on)= 0.8 ΩMAX. (@ VGS= –10 V, ID= –3.0 A)
• Low CissCiss= 1040 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package