NPN Triple Diffused Planar Silicon Transistor
Features
• High speed.
• High breakdown voltage (VCBO=1500V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.
NPN Triple Diffused Planar Silicon Transistor
Features
• High speed.
• High breakdown voltage (VCBO=1500V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.